From the given transfer characteristic of a transistor in CE configuration, the value of power gain of this configuration is $10^{\mathrm{x}}$, for $\mathrm{R}_{\mathrm{B}}=10 \mathrm{k} \Omega$, and $\mathrm{Rc}=1 \mathrm{k} \Omega$. The value of x is $\_\_\_\_$ .
