In a semiconductor p-n diode, the doping concentrations on p-side and $n$-side are $10^{15} \mathrm{atoms} / \mathrm{cm}^3$ and $10^{18}$ atoms $/ \mathrm{cm}^3$, respectively. Which one of the following statements is true?
Select the correct option:
A
Widths of depletion region on either side of the interface are equal.
B
The depletion region width is more on p -side compared to that in n-side.
C
The depletion region width is more on n -side compared to that in p-side.
D
No depletion region forms because of unequal doping concentrations on p and n-sides.
✓ Correct! Well done.
✗ Incorrect. Try again or view the solution.
Solution
\begin{aligned}
& N_p x_p=N_n x_n \\
& \mathrm{~N}_{\mathrm{p}}<\mathrm{N}_{\mathrm{n}} \therefore \mathrm{x}_{\mathrm{p}}>\mathrm{x}_{\mathrm{n}} \text { in depletion region }
\end{aligned}
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